Extended Generation Profile - E.B.I.C. Model
نویسندگان
چکیده
منابع مشابه
Introducton to EBIC
In a semiconductor either electrons or holes typically dominate as dictated by the concentration of ionized dopants, and the nomenclature is n type for electrons dominating and p type for holes. Minority carriers are therefore holes in n type and electrons in p type. Electron-hole pair generation is a local disturbance from the equilibrium concentration. As electron hole pairs are formed, the d...
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ژورنال
عنوان ژورنال: Journal de Physique III
سال: 1996
ISSN: 1155-4320,1286-4897
DOI: 10.1051/jp3:1996136